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july 2006 rev 6 1/15 15 stp10nk80zfp stp10nk80z - STW10NK80Z n-channel 800v - 0.78 ? - 9a - to-220/fp-to-247 zener-protected supermesh tm mosfet general features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeability description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. applications switching application internal schematic diagram type v dss r ds(on) i d pw stp10nk80z 800v <0.90 ? 9a 160 w STW10NK80Z 800v <0.90 ? 9a 160 w stp10nk80zfp 800v <0.90 ? 9a 40 w to-220 to-220fp to-247 1 2 3 1 2 3 www.st.com order codes part number marking package packaging stp10nk80z p10nk80z to-220 tube stp10nk80zfp p10nk80zfp to-220fp tube STW10NK80Z w10nk80z to-247 tube
contents stp10nk80zfp - stp10nk80z - STW10NK80Z 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stp10nk80zfp - stp10nk80z - STW10NK80Z electrical ratings 3/15 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit to-220/ to-247 to-220fp v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20k ? ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25c 9 9 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c =100c 6 6 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 36 36 (1) a p tot total dissipation at t c = 25c 160 40 w derating factor 1.28 0.32 w/c vesd(g-s) g-s esd (hbm c=100pf, r=1.5k ?) 4kv dv/dt (3) 3. i sd 9a, di/dt 200a/s,v dd v (br)dss , t j t jmax peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) -- 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal data symbol parameter value unit to-220 to-220fp to-247 r thj-case thermal resistance junction-case max 0.78 3.1 0.78 c/w r thj-a thermal resistance juncti on-ambient max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 9a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 290 mj
electrical characteristics stp10nk80zfp - stp10nk80z - STW10NK80Z 4/15 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20v 10 na v gs(th) gate threshold voltage v ds = v gs , i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.5a 0.78 0.9 ? table 5. dynamic symbol parameter test cond ictions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 4.5a 9.6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 2180 205 38 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds inceases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0v to 640v 105 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =640v, i d = 9a v gs =10v (see figure 19) 72 12.5 37 nc nc nc
stp10nk80zfp - stp10nk80z - STW10NK80Z electrical characteristics 5/15 table 6. switching times symbol parameter test cond ictions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =400 v, i d =4.5a, r g =4.7 ?, v gs =10v (see figure 20) 30 20 ns ns t d(off) t f turn-off delay time fall time v dd =400 v, i d =4.5a, r g =4.7 ?, v gs =10v (see figure 20) 65 17 ns ns table 7. gate-source zener diode symbol parameter test cond ictions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have spec ifically been designed to enhance not only the device?s esd capability, but also to make them safely absor b possible voltage transients that may occasionally be applied from gate to source. in this respect the z ener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s in tegrity. these integrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs=1ma (open drain) 30 v table 8. source drain diode symbol parameter test condictions min typ. max unit i sd source-drain current 9 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 36 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =9a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =9a, di/dt = 100a/s, v dd =45v, tj=150c 645 6.4 20 ns c a
electrical characteristics stp10nk80zfp - stp10nk80z - STW10NK80Z 6/15 2.1 electrical characterist ics (curves) figure 1. safe operating area for to-220 figure 2. thermal impedance for to-220 figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. safe operating area for to-247 figure 6. thermal impedance for to-247
stp10nk80zfp - stp10nk80z - STW10NK80Z electrical characteristics 7/15 figure 7. output characterisics figure 8. transfer characteristics figure 9. transconductance figure 10. static drain-source on resistance figure 11. gate charge vs gate-source voltage figure 12. capacitance variations
electrical characteristics stp10nk80zfp - stp10nk80z - STW10NK80Z 8/15 figure 13. normalized gate threshold voltage vs temperature figure 14. normalized on resistance vs temperature figure 15. source-drain diode forward characteristics figure 16. normalized b vdss vs temperature figure 17. maximum avalanche energy vs temperature
stp10nk80zfp - stp10nk80z - STW10NK80Z test circuit 9/15 3 test circuit figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform
package mechanical data stp10nk80zfp - stp10nk80z - STW10NK80Z 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stp10nk80zfp - stp10nk80z - STW10NK80Z package mechanical data 11/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
package mechanical data stp10nk80zfp - stp10nk80z - STW10NK80Z 12/15 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp10nk80zfp - stp10nk80z - STW10NK80Z package mechanical data 13/15 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
revision history stp10nk80zfp - stp10nk80z - STW10NK80Z 14/15 5 revision history table 9. document revision history date revision changes 08-sep-2005 4 complete document 10-mar-2006 5 inserted ecopack indication 28-sep-2005 6 new template, no content change
stp10nk80zfp - stp10nk80z - STW10NK80Z 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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